| PART |
Description |
Maker |
| ZVP2110ASTZ UZVN3306ASTOB DIODESINC-ZVN3306ASMTA U |
230 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
260 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
ZETEX PLC
DIODES INC
|
| MMBZ5230BL MMBZ5230BLT1 MMBZ5254BL MMBZ5263BL MMBZ |
Small Signal 4.7V 5%
Small Signal 27V 5%
56V Zener
Small Signal 33V 5%
Small Signal 12V 5%
Small Signal 13V 5%
Small Signal 15V 5%
Small Signal 20V 5%
|
ON Semiconductor
|
| MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP315P |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.80
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| BZX85C47GP BZX85C15GP BZX85C75GP BZX85C7V5GP BZX85 |
150 V, 2 mA, 1.3 W glass passivated zener diode
SMALL SIGNAL SCHOTTKY DIODES 齐纳二极
5.0V PC real-time clock 齐纳二极
Low capacitance, low series inductance and resistance Schottky diodes
Low capacitance small signal Schottky diodes
Small signal Schotky diodes
|
Fagor
Electronics Industry Public Company Limited
Fairchild Semiconductor, Corp.
|
| VN10LLS-TR1 VN0605T-T1 VN0605T-T1-E3 |
Trans MOSFET N-CH 60V 0.32A 3-Pin TO-92S T/R
TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET General Purpose Small Signal
TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE, TO-236, 3 PIN, FET General Purpose Small Signal
|
Vishay Siliconix
|
| SI4864DY-T1-GE3 |
TRANSISTOR 17000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
Vishay Siliconix
|
| 2SD0968A 2SD0968A2SD968A |
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
|
Panasonic
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| BSS192 Q62702-S634 |
SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) 150 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
NXP Semiconductors N.V.
|
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